公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al<inf>2</inf>O<inf>3</inf> on pristine n-GaAs(0 0 1)-4 ? 6 surface | Chang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; MINGHWEI HONG ; Kwo, J. | Microelectronic Engineering | | | |
2015 | In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures | Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; MINGHWEI HONG | Nanotechnology | | | |
2017 | Interfacial characteristics of Y<inf>2</inf>O<inf>3</inf>/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition | Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2013 | Interfacial electronic structure of trimethyl-aluminum and water on an In<inf>0.20</inf>Ga<inf>0.80</inf>As(001)-4 ? 2 surface: A high-resolution core-level photoemission study | Pi, T.W.; Lin, H.Y.; Chiang, T.H.; Liu, Y.T.; Wertheim, G.K.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | | | |
2018 | Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited) | MINGHWEI HONG ; Lin, Y.H.; Wan, H.W.; Chen, W.S.; Cheng, Y.T.; Cheng, C.P.; Pi, T.W.; Kwo, J. | 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings | | | |
2019 | Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum | Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B.; Cheng, C.P.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2017 | Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition | MINGHWEI HONG ; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J. | Applied Physics Letters | | | |
2017 | Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance | Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2014 | Synchrotron radiation photoemission study of interfacial electronic structure of HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As(001)-4 ? 2 from atomic layer deposition | Pi, T.W.; Lin, T.D.; Lin, H.Y.; Chang, Y.C.; Wertheim, G.K.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |