Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2000 | A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs | Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; MINGHWEI HONG ; Kwo, J; Mannaerts, JP; Anselm, KA | IEEE/Cornell Conference on High Performance Devices, 2000 | | | |
1997 | Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide | Ren, F; MINGHWEI HONG ; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY | Solid-State Electronics | | | |
1997 | DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION | Ren, F; MINGHWEI HONG ; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP | Electrochemical Society ( ECS ) Proceedings | | | |
1997 | Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; MINGHWEI HONG ; Kuo, JM; Hobson, WS; Tsai, HS; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others | Device Research Conference Digest 1997 | | | |
1998 | Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics | Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; MINGHWEI HONG ; Marcus, MA; Schurman, MJ; Baca, AG; Shul, RJ | Solid-State Electronics | | | |
1998 | Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3 (Gd2O3) as the gate oxide | MINGHWEI HONG ; Ren, F; Kuo, JM; Hobson, WS; Kwo, J; Mannaerts, JP; Lothian, JR; Chen, YK | Journal of Vacuum Science & Technology B | | | |
1997 | Dielectrics for GaN based MIS-diodes | Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; MINGHWEI HONG ; Macos, M; Schurman, MJ; Baca, AG; Shul, RJ | MRS Proceedings | | | |
1998 | Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors | Ren, F; MINGHWEI HONG ; Chu, SNG; Marcus, MA; Schurman, MJ; Baca, A; Pearton, SJ; Abernathy, CR | Applied Physics Letters | | | |
1998 | Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors | Abernathy, CR; Baca, A; Chu, SNG; MINGHWEI HONG ; Lothian, JR; Marcus, MA; Pearton, SJ; Ren, F; Schurman, MJ | | | | |
1996 | Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates | Ren, F; MINGHWEI HONG ; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y | International Electron Devices Meeting, 1996 | | | |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; MINGHWEI HONG ; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others | Electron Device Letters, IEEE | | | |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | MINGHWEI HONG ; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others | 28th State-of-the-Art Program on Compound Semiconductors | | | |
1997 | Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs | MINGHWEI HONG ; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others | IEEE International Symposium on Compound Semiconductors, 1997 | | | |
1997 | III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Ren, F; MINGHWEI HONG ; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others | 19th Annual Gallium Arsenide Integrated Circuit Symposium, 1997 | | | |
2000 | in-V MOSFET Using Ga203/Gd203 As The Gate Oxide | Ren, F; MINGHWEI HONG ; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ | Topical Workshop on Heterostructure Microelectronics | | | |
1997 | Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling | Passlack, M; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR | IEEE Transactions on Electron Devices | | | |
1997 | Wet Chemical and Plasma Etching of Ga2 O 3 (Gd2 O 3) | Ren, F; MINGHWEI HONG ; Mannaerts, JP; Lothian, JR; Cho, AY | Journal of the Electrochemical Society | | | |