公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; MINGHWEI HONG ; Ng, K.K.; Bude, J. | IEEE Electron Device Letters | | | |
2004 | GaAs-based metal-oxide semiconductor field-effect transistors with Al <inf>2</inf> O <inf>3</inf> gate dielectrics grown by atomic layer deposition | Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; MINGHWEI HONG ; Ng, K.K.; Bude, J. | Journal of Electronic Materials | | | |
2002 | Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; MINGHWEI HONG ; Ng, K.; Bude, J. | 2002 12th International Conference on Molecular Beam Epitaxy | | | |
- | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; MINGHWEI HONG ; Ng, K.; Bude, J. | Journal of Crystal Growth | | | |