公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiation | Pi, T-W; Huang, ML; Kwo, J; Lee, WC; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-k gate dielectrics | You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes Based on High-kappa Gate Dielectrics | You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; MINGHWEI HONG | APS Meeting Abstracts | | | |
2007 | MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD | Lee, Kun Yu; Lee, WC; Lin, TD; Lee, CS; Chang, YC; Lee, YJ; Huang, ML; Wu, YD; MINGHWEI HONG ; Kwo, J | APS Meeting Abstracts | | | |
2010 | Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; MINGHWEI HONG ; Kwo, J | Solid-State Electronics | | | |
2011 | Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric | Chang, WH; Chiang, TH; Wu, YD; MINGHWEI HONG ; Lin, CA; Kwo, J | Journal of Vacuum Science & Technology B | | | |