公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2010 | Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy | Y. T. Lin; T. C. Ma; HAO-HSIUNG LIN | MBE Taiwan 2010 | |||
2005 | Low-power Variable-length Fast Fourier Transform Processor | Y. T. Lin; P. Y. Tsai; TZI-DAR CHIUEH | IEE Proceedings Computers & Digital Techniques | 84 | 44 | |
2012 | MBE growth of InAs nanowires on Si | L. H. Chen; Y. T. Lin; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | |||
2006 | Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy | Y. T. Lin; T. C. Ma; T. Y. Chen; HAO-HSIUNG LIN | OPT2006 | |||
2009 | Nitrogen atomic rearrangement in thermally annealed GaAsSbN | Y. T. Lin; T. C. Ma; H. H. Lin; J. D. Wu; Y. S. Huang; HAO-HSIUNG LIN | OPT2009 | |||
2010 | Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy | H. P. Hsu; Y. S. Huang; Y. T. Lin; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | Materials Chemistry and Physics | 7 | ||
2008 | Origin of the annealing-induced blue-shift in GaAsSbN | Y. T. Lin; T. C. Ma; T. Y. Chen; HAO-HSIUNG LIN | 20th International Conference on Indium Phosphide and Related Materials | |||
2007 | Origin of the annealing-induced blue-shift in GaAsSbN bulk layers | Y. T. Lin; T. C. Ma; T. Y. Chen; HAO-HSIUNG LIN | OPT2007 | |||
2005 | Performance evaluation of field-enhanced p-channel split-gate flash memory | W. T. Chu; Y. H. Wang; C. T. Hsieh; Y. T. Lin; C. S. Wang; HAO-HSIUNG LIN | IEEE Electron Device Letters | 2 | 2 | |
2006 | Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy | T. Y. Chen; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2009 | Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy, | H. P. Hsu; Y. N. Huang; Y. S. Huang; Y. T. Lin; T. C. Ma; H. H. Lin; K. K. Tiong; P. Sitarek; J. Misiewicz; HAO-HSIUNG LIN | Physica Status Solidi (A) Applications and Materials Science | 0 | ||
2012 | Short range structure of dilute nitride GaAsSbN | H. H. Lin; C. L. Chiou; Y. T. Lin; T. C. Ma; J. S. Wu; Z. C. Feng; HAO-HSIUNG LIN | Russia-Taiwanese Symposium, Physics and mechanics of new materials and their applications | |||
2013 | Short range structure of dilute nitride GaAsSbN | H. H. Lin; C. L. Chiou; Y. T. Lin; T. C. Ma; J. S. Wu; Z. C. Feng; HAO-HSIUNG LIN | Physics and Mechanics of New Materials and Their Applications | |||
2011 | Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy | Y. T. Lin; J. S. Wu; Z. C. Feng; HAO-HSIUNG LIN | 2011 International electron devices and materials symposia | |||
2012 | Slanted InAs nanowires gorwn by GSMBE | W. C. Chen; L. H. Chen; Y. T. Lin; HAO-HSIUNG LIN | OPTIC 2012, optics and photonics Taiwan, international conference 2012 | |||
2012 | Structural properties of InAs nanowires grown by GSMBE | W. C. Chen; L. H. Chen; Y. T. Lin; HAO-HSIUNG LIN | IEDMS 2012, international electron devices and materials symposium | |||
2007 | Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates | T. C. Ma; T. Y. Chen; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2007 |