Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
1993 | Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy | Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG | Conference on Lasers and Electro-Optics | | | |
1997 | Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide | Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY; MINGHWEI HONG | Solid-State Electronics | | | |
1997 | Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Tsai, HS; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others; MINGHWEI HONG | Device Research Conference Digest 1997 | | | |
1998 | Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors | Ren, F; Hong, M; Chu, SNG; Marcus, MA; Schurman, MJ; Baca, A; Pearton, SJ; Abernathy, CR; MINGHWEI HONG | Applied Physics Letters | | | |
1998 | Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors | Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; Marcus, MA; Pearton, SJ; Ren, F; Schurman, MJ; MINGHWEI HONG | | | | |
1998 | Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors; Applied Physics Letters | Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; MINGHWEI HONG | | | | |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | Electron Device Letters, IEEE | | | |
1995 | Ga203 films for electronic and optoelectronic ap | Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | | | |
1995 | Ga2O3 films for electronic and optoelectronic applications | Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; Hong, M; Ng, KK; others; MINGHWEI HONG | Applied Physics Letters | 311 | 280 | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG | Electron Device Letters, IEEE | 227 | 193 | |
1993 | GaAs surface reconstruction obtained using a dry process | Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG | Journal of Applied Physics | | | |
2003 | GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG | Device Research Conference, 2003 | | | |
2002 | GaN/Gd2O3/GaN Single Crystal Heterostructure | Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG | State-of-the-Art Program on Compound Semiconductors XXXVI, and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II | | | |
1993 | Hydrogen plasma processing of GaAs and AlGaAs | Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1993 | Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy | Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG | Applied Physics Letters | | | |
1997 | III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | 19th Annual Gallium Arsenide Integrated Circuit Symposium, 1997 | | | |
1995 | In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity | Passlack, M; Hong, M; Schubert, EF; Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG | Applied Physics Letters | | | |
1995 | In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications | Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Chu, SNG; Opila, Robert L; Moriya, Netzer; MINGHWEI HONG | International Electron Devices Meeting 1995 | | | |
1994 | In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication | Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG | Journal of electronic materials | | | |