公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT | Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG | Device Research Conference 2010 | | | |
1994 | Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells | Chua, CL; Lin, CH; Zhu, ZH; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, R; MINGHWEI HONG | Photonics Technology Letters, IEEE | | | |
1991 | GaAs/AlxGa1- xAs quantum well infra-red photodetectors with cutoff wavelength $λ$c= 14.9 $μ$m | Zussman, A; Levine, BF; Hong, Mingyi; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | | | |
1997 | Long-wavelength resonant vertical-cavity LED/photodetector with a 75-nm tuning range | Christenson, GL; Tran, ATTD; Zhu, ZH; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, R; MINGHWEI HONG | Photonics Technology Letters, IEEE | | | |
1995 | Low-threshold 1.57-$μ$m VC-SEL's using strain-compensated quantum wells and oxide/metal backmirror | Chua, CL; Zhu, ZH; Lo, YH; Bhat, R; Hong, Mingyi; MINGHWEI HONG | Photonics Technology Letters, IEEE | | | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100) | Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
1996 | Reliability studies of wafer-bonded InGaAs PIN photodetectors on GaAs substrates | Ejeckam, FE; Chua, CL; Zhu, Z-H; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, Ritesh; MINGHWEI HONG | Lasers and Electro-Optics, 1996. CLEO'96 | | | |
1996 | WDM transmitters using wavelength-tunable vertical-cavity lasers and resonant-cavity detectors | Christenson, GL; Tran, ATTD; Chua, CL; Zhu, Z-H; Lo, Yen-Hua; Hong, Mingyi; Mannaerts, JP; Bhat, Ritesh; MINGHWEI HONG | Lasers and Electro-Optics, 1996. CLEO'96 | | | |