公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Application of anodization followed by rapid thermal treatment to thin gate oxide growth | Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | | | |
1988 | C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation | Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU | Journal of the Electrochemical Society | 11 | 13 | |
1998 | Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition method | Lee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | | | |
1998 | Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation | Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU | Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering | | | |
2009 | 以伸張應力及直流疊加交流之陽極氧化法成長超薄閘極氧化層 | 李佳叡; Lee, Chia-Jui | | | | |
2008 | 以純水陽極氧化法製備金氧半太陽能電池效率及穩定度研究 | 莊庭彰; Chuang, Ting-Chang | | | | |
2009 | 以遮蔽式蒸鍍及硝酸氧化技術低溫製備高介電係數氧化鋁閘極介電層 | 陳慶航; Chen, Ching-Hang | | | | |
2008 | 伸張應力對快速熱成長超薄閘極氧化層金氧半電容元件之效應 | 劉建語; Liu, Chien-Yu | | | | |
2008 | 伸張應力對超薄閘極氧化層金氧半電容元件之影響 | 陳星霖; Chen, Hsing-Lin | | | | |
2009 | 超薄氧化層純水補償技術及氫對ONO介電層可靠度之影響 | 楊宜霖; Yang, Yi-Lin | | | | |
2008 | 金氧半元件中高介電係數閘極介電層之反轉穿隧電流特性分析 | 陳志豪; Chen, Chih-Hao | | | | |
2009 | 高介電係數氧化鉿閘極介電層金氧半電容元件之不均勻特性分析 | 盧卉庭; Lu, Hui-Ting | | | | |