公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Ab-initio study of optical conductivity of BxCy nano-composite system | Jana, D.; Chen, L.C.; Chen, C.W.; Chen, K.H. | Indian Journal of Physics and Proceedings of the Indian Association for the Cultivation of Science | | | |
2007 | Ab-initio study of optical conductivity of BxCy nano-composite system | Jana, D.; Chen, L.-C. ; Chen, C.W.; Chen, K.-H. | Indian Journal of Physics | | | |
2017 | Cross-point resistive switching memory and urea sensing by using annealed GdO<inf>x</inf> film in IrO<inf>x</inf>/GdO<inf>x</inf>/W structure for biomedical applications | Kumar, P.; Maikap, S.; Ginnaram, S.; Qiu, J.-T.; Jana, D.; Chakrabarti, S.; Samanta, S.; Singh, K.; Roy, A.; Jana, S.; Dutta, M.; Chang, Y.-L.; Cheng, H.-M.; Mahapatra, R.; Chiu, H.-C.; Yang, J.-R.; JER-REN YANG | Journal of the Electrochemical Society | | | |
2013 | Effect of chemical doping of boron and nitrogen on the electronic, optical, and electrochemical properties of carbon nanotubes | Jana, D.; Sun, C.-L.; Chen, L.-C. ; Chen, K.-H. | Progress in Materials Science | 267 | 252 | |
2014 | Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance lrO<inf>x</inf>/GdO<inf>x</inf>/W cross-point memories | Jana, D.; Maikap, S.; Prakash, A.; Chen, Y.-Y.; Chiu, H.-C.; Yang, J.-R.; JER-REN YANG | Nanoscale Research Letters | | | |
2018 | Evolution of resistive switching mechanism through H <inf>2</inf> O <inf>2</inf> sensing by using TaO <inf>x</inf> -based material in W/Al <inf>2</inf> O <inf>3</inf> /TaO <inf>x</inf> /TiN structure | Chakrabarti, S.; Panja, R.; Roy, S.; Roy, A.; Samanta, S.; Dutta, M.; Ginnaram, S.; Maikap, S.; Cheng, H.-M.; Tsai, L.-N.; Chang, Y.-L.; Mahapatra, R.; Jana, D.; Qiu, J.-T.; Yang, J.-R.; JER-REN YANG | Applied Surface Science | | | |
2007 | A first principles study of the optical properties of B <inf>x</inf> C <inf>y</inf> single wall nanotubes | Jana, D.; Chen, L.-C.; Chen, C.W.; Chattopadhyay, S.; Chen, K.-H.; CHUN-WEI CHEN | Carbon | | | |
2014 | Impact of AlO<inf>x</inf> interfacial layer and switching mechanism in W/AlO<inf>x</inf>/TaO<inf>x</inf>/TiN RRAMs | Chakrabarti, S.; Jana, D.; Dutta, M.; Maikap, S.; Chen, Y.-Y.; Yang, J.-R.; JER-REN YANG | 2014 IEEE 6th International Memory Workshop, IMW 2014 | | | |
2015 | Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlO<inf>x</inf>/TaO<inf>x</inf>/TiN structure | Roy, S.; Maikap, S.; Sreekanth, G.; Dutta, M.; Jana, D.; Chen, Y.Y.; Yang, J.R.; JER-REN YANG | Journal of Alloys and Compounds | | | |
2014 | Low current cross-point memory using gadolinium-oxide switching material | Jana, D.; Maikap, S.; Chen, Y.Y.; Yang, J.R.; JER-REN YANG | Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 | | | |