公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2006 | [111]B-oriented GaAsSb grown by gas source molecular beam epitaxy | L. C. Chou; Y. R. Lin; HAO-HSIUNG LIN | 6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS) | |||
2006 | [111]B-oriented GaAsSb grown by gas source molecular beam epitaxy | L. C. Chou; Y. R. Lin; C. T. Wan; HAO-HSIUNG LIN | Microelectronics Journal | |||
2007 | [111]B-oriented GaAsSb/GaAs quantum wells grown by gas-source molecular beam epitaxy | L. C. Chou; HAO-HSIUNG LIN | MBE Taiwan 2007 | |||
2006 | A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | OPT2006 | |||
2008 | Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells | T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; L. C. Chou; HAO-HSIUNG LIN | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 30 | 28 | |
2006 | Coherent acoustic phonon oscillation in (111) InGaAs/GaAs MQWs with piezoelectric fields | Y. C. Wen; L. C. Chou; H. H. Lin; K. H. Lin; C. Y. Chen; CHI-KUANG SUN ; HAO-HSIUNG LIN | OPT2006 | |||
2011 | Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 5 | ||
2006 | Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics | Y. C. Wen; K. H. Lin; T. F. Kao; L. C. Chou; H. H. Lin; CHI-KUANG SUN ; HAO-HSIUNG LIN ; CHI-KUANG SUN | Journal of Applied Physics | 9 | ||
2007 | Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects | Y. C. Wen; L. C. Chou; H. H. Lin; V. Gusev; K. H. Lin; CHI-KUANG SUN ; HAO-HSIUNG LIN ; CHI-KUANG SUN | Applied Physics Letters | |||
2007 | Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy | T. C. Ma; Y. T. Lin; T. Y. Chen; L. C. Chou; HAO-HSIUNG LIN | 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials | 1 | 11 | |
2007 | Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy | L. C. Chou; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2011 | Orentation dependent phase separation in GaAsSb | Y. R. Chen; L. C. Chou; Y. J. Yang; HAO-HSIUNG LIN | 2011 AVS international plasma workshop on processing and characterization of advanced materials | |||
2012 | Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy | Y. R. Chen; L. C. Chou; Y. J. Yang; HAO-HSIUNG LIN | Thin solid film | 4 | ||
2003 | Resonant-cavity light-emitting diodes with coupled cavity | L. C. Chou; B. L. Yen; J. D. Juang; H. T. Jan; HAO-HSIUNG LIN | Electron devices and materials symposium | |||
2011 | Structural properties of (111)B GaAsSb grown on GaAs substrates | Y. R. Chen; L. C. Chou; Y. J. Yang; HAO-HSIUNG LIN | 18th American conference on crystal growth and epitaxy, ACCGE-18 | |||
2012 | Structural properties of GaAsSb grown on GaAs | Y. R. Chen; L. C. Chou; Y. J. Yang; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | |||
2004 | Study on high-power resonant-cavity light-emitting diodes | L. C. Chou; B. L. Yen; J. D. Juang; H. T. Jan; HAO-HSIUNG LIN | OPT 2004 | |||
2009 | The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2010 | The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | 22nd International Conference on Indium Phosphide and Related Materials (IPRM) | |||
2013 | Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy | Y. R. Chen; L. C. Chou; Y. J. Yang; HAO-HSIUNG LIN | Journal of Physics D: Applied Physics |