https://scholars.lib.ntu.edu.tw/handle/123456789/333527
標題: | Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy | 作者: | T. C. Ma Y. T. Lin T. Y. Chen L. C. Chou HAO-HSIUNG LIN |
公開日期: | 五月-2007 | 起(迄)頁: | 350-353 | 來源出版物: | 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials | 摘要: | We report the incorporation behaviors of Sb and N in GaAsSbN epilayers grown by gas source molecular beam epitaxy. Our study reveals that N incorporation is independent of the growth temperature and the Sb flux. Lattice-matched GaAsSbN layers show lower energy gaps than those of InGaAsN reported in literatures. The lowest energy gap achieved in this study is 0.79 eV. © 2007 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-34748851310&doi=10.1109%2fICIPRM.2007.381195&partnerID=40&md5=10e1fa1821295be7f57cdac5bc77ffc1 | DOI: | 10.1109/iciprm.2007.381195 | SDG/關鍵字: | Antimony; Energy gap; Epilayers; Growth temperature; Molecular beam epitaxy; Nitrogen; Lattice-matching; Semiconducting gallium compounds |
顯示於: | 電機工程學系 |
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