Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2021 | Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride | Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN | Chemistry of Materials | |||
2021 | First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications | Chang S.-W; Lu T.-H; Yang C.-Y; Yeh C.-J; Huang M.-K; Meng C.-F; Chen P.-J; Chang T.-H; Chang Y.-S; Jhu J.-W; Hong T.-Z; Ke C.-C; Yu X.-R; Lu W.-H; Baig M.A; Cho T.-C; Sung P.-J; Su C.-J; Hsueh F.-K; Chen B.-Y; Hu H.-H; Wu C.-T; Lin K.-L; Ma W.C.-Y; Lu D.-D; Kao K.-H; Lee Y.-J; Lin C.-L; Huang K.-P; Chen K.-M; Li Y; Samukawa S; Chao T.-S; Huang G.-W; Wu W.-F; Lee W.-H; JIUN-YUN LI ; Shieh J.-M; Tarng J.-H; Wang Y.-H; Yeh W.-K. | Technical Digest - International Electron Devices Meeting, IEDM | 3 | 0 | |
2019 | High- K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment | Chang T.-J; Lee W.-H; Wang C.-I; Yi S.-H; Yin Y.-T; Lin H.-C; HSIN-CHIH LIN ; MIIN-JANG CHEN | ACS Applied Electronic Materials | 19 | 19 |