公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2012 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments | M. H.Liao ; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen | Journal of Physics D: Applied Physics |