Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
1998 | Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article | MINGHWEI HONG ; Kwo, Jueinai Raynien; Mannaerts, Joseph Petrus; Passlack, Matthias; Ren, Fan; Zydzik, George John | | | | |
1995 | In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications | Passlack, Matthias; MINGHWEI HONG ; Mannaerts, Joseph P; Chu, SNG; Opila, Robert L; Moriya, Netzer | International Electron Devices Meeting 1995 | | | |
1996 | Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy | Passlack, Matthias; MINGHWEI HONG ; Mannaerts, Joseph P; Opila, Robert L; Ren, Fan | Applied Physics Letters | | | |