公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2004 | Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, HJL; MINGHWEI HONG ; Ng, KK; Bude, J | Applied Physics Letters | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; MINGHWEI HONG ; Ng, KK; others | Applied Physics Letters | | | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; MINGHWEI HONG ; others | Electron Device Letters, IEEE | | | |
2004 | GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, KK; others | Journal of electronic materials | | | |