| 公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1 | 2023 | Numerical Analysis and Optimization of a Hybrid Layer Structure for Triplet-Triplet Fusion Mechanism in Organic Light-Emitting Diodes | Huang, JY; Hung, HC; Hsu, KC; Chen, CH; Lee, PH; Lin, Hung-Yi; Lin, BY; Leung, MK ; Chiu, TL; Lee, Jiun-Haw; Friend, RH; Wu, YR | ADVANCED THEORY AND SIMULATIONS | 0 | 0 | |
2 | 2009 | Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs | Wu, YR; Chiu, CH; Chang, CY; Yu, PC; Kuo, HC; YUH-RENN WU | IEEE Journal of Selected Topics in Quantum Electronics | 88 | 82 | |
3 | 2009 | Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes | Huang, HH; Wu, YR; YUH-RENN WU | Journal of Applied Physics | 42 | 68 | |
4 | 2009 | Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting | Wu, YR; Lin, YY; Huang, HH; Singh, J; YUH-RENN WU | Journal of Applied Physics | 117 | 105 | |
5 | 2008 | Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors | Chung, JW; Zhao, X; Wu, YR; Singh, J; Palacios, T; YUH-RENN WU | Applied Physics Letters | 14 | 17 | |
6 | 2008 | Extraction of transport dynamics in AlGaN/GaN HFETs through free carrier absorption | Wu, YR; Hinckley, JM; Singh, J; YUH-RENN WU | Journal of Electronic Materials | 4 | 4 | |
7 | 2007 | Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures | Yang, SY; Zhan, Q; Yang, PL; Cruz, MP; Chu, YH; Ramesh, R; Wu, YR; Singh, J; Tian, W; Schlom, DG; YUH-RENN WU | Applied Physics Letters | 55 | 46 | |
8 | 2007 | Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance | Wu, YR; Singh, J; YUH-RENN WU | Journal of Applied Physics | 44 | 40 | |
9 | 2006 | Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length | Wu, YR; Singh, M; Singh, J; YUH-RENN WU | IEEE Transactions on Electron Devices | 51 | 45 | |
10 | 2005 | Polar heterostructure for multifunction devices: Theoretical studies | Wu, YR; Singh, J; YUH-RENN WU | IEEE Transactions on Electron Devices | 37 | 32 | |
11 | 2005 | Sources of transconductance collapse in III-V nitrides - Consequences of velocity-field relations and source/gate design | Wu, YR; Singh, M; Singh, J; YUH-RENN WU | IEEE Transactions on Electron Devices | 29 | 23 | |
12 | 2005 | Velocity overshoot effects and scaling issues in III-V nitrides | Singh, M; Wu, YR; Singh, JP; YUH-RENN WU | IEEE Transactions on Electron Devices | 25 | 22 | |
13 | 2004 | Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors | Wu, YR; Singh, J; YUH-RENN WU | Applied Physics Letters | 52 | 44 | |
14 | 2003 | Examination of LiNbO3/nitride heterostructures | Singh, M; Wu, YR; Singh, J; YUH-RENN WU | Solid-State Electronics | 20 | 18 | |
15 | 2003 | Gate leakage suppression and contact engineering in nitride heterostructures | Wu, YR; Singh, M; Singh, J; YUH-RENN WU | Journal of Applied Physics | 51 | 46 | |
16 | 2001 | Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardment | Datta, A; Wu, YR; Wang, YL; YUH-RENN WU | Physical Review B | 77 | 67 | |
17 | 1999 | Gas-assisted focused-ion-beam lithography of a diamond (100) surface | Datta, A; Wu, YR; Wang, YL; YUH-RENN WU | Applied Physics Letters | 17 | 13 | |