DC 欄位 | 值 | 語言 |
dc.contributor | Graduate Inst. of Electro-Opt. Eng., National Taiwan Univ. | en |
dc.contributor.author | LUNG-HAN PENG | en |
dc.contributor.author | Chuang, C.-W. | en |
dc.contributor.author | Hsu, Y.-C. | en |
dc.contributor.author | Ho, J.-K. | en |
dc.contributor.author | Huang, C.-N. | en |
dc.contributor.author | Chen, C.-Y. | en |
dc.creator | Peng, L.-H.; Chuang, C.-W.; Hsu, Y.-C.; Ho, J.-K.; Huang, C.-N.; Chen, C.-Y. | en |
dc.date | 1998-05 | en |
dc.date.accessioned | 2007-04-19T02:30:13Z | - |
dc.date.accessioned | 2018-07-05T02:41:16Z | - |
dc.date.available | 2007-04-19T02:30:13Z | - |
dc.date.available | 2018-07-05T02:41:16Z | - |
dc.date.issued | 1998-05 | - |
dc.identifier | N/A | en |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021814 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031633250&doi=10.1109%2fcleo.1998.675987&partnerID=40&md5=6c1d56bf8946ac18dab7560d63f1480e | - |
dc.description.abstract | The use of deep ultraviolet irradiation to enhance the oxidative-dissolution process in the photoelectrochemical etching of gallium is nitride is presented. Study indicates that the hydration effect plays an important roles in establishing a peak etch rate as high as 90 nm/min. and 120 nm/min. in aqueous potassium hydroxide and phosphorous acid solutions at pH = 14.25 and 0.75, respectively. | - |
dc.format | application/pdf | en |
dc.format.extent | 208546 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en-US | en |
dc.language.iso | en_US | - |
dc.relation | Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on | en |
dc.relation.ispartof | Conference on Lasers and Electro-Optics Europe - Technical Digest | - |
dc.subject.other | Etching; Hydration; Irradiation; Mathematical models; Oxidation; pH; Phosphoric acid; Photochemical reactions; Potassium compounds; Reaction kinetics; Solutions; Ultraviolet radiation; Energy dispersion x ray analysis; Gallium nitride; Hydration model; Peaking effect; pH dependence; Photoelectrochemical etching; Potassium hydroxide; Wet chemical etching; Semiconducting gallium compounds | - |
dc.title | Deep ultraviolet enhanced wet chemical oxidation and etching of gallium nitride | en |
dc.type | conference paper | en |
dc.relation.conference | Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO | - |
dc.identifier.doi | 10.1109/CLEO.1998.675987 | en |
dc.identifier.scopus | 2-s2.0-0031633250 | - |
dc.relation.pages | 153 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021814/1/00675987.pdf | - |
item.fulltext | with fulltext | - |
item.openairetype | conference paper | - |
item.languageiso639-1 | en_US | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 光電工程學研究所
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