光電工程學研究所

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Collection's Items (Sorted by Title in Ascending order): 1 to 20 of 3254

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Issue Date	Title	Author(s)	Type	scopus	WOS
2006	1 × N<sup>2</sup> Wavelength-selective switch with two cross-scanning one-axis analog micromirror arrays in a 4 - F optical System	JUI-CHE TSAI	journal article	35	25
2012	1,3,4-Oxadiazole Containing Silanes as Novel Hosts for Blue Phosphorescent Organic Light Emitting Diodes	JIUN-HAW LEE	journal article	21	19
2005	1.2-ps mode-locked semiconductor optical amplifier fiber laser pulses generated by 60-ps backward dark-optical comb injection and soliton compression	GONG-RU LIN	journal article	58	49
2010	1.55 μm photoluminescent iron silicide prepared by thermal diffusion of Iron nanoparticles into Si substrate	GONG-RU LIN	conference paper	1	0
2002	1.55-μm asymmetric Fabry-Perot modulator (AFPM) for high-speed applications	JIAN-JANG HUANG	journal article	9	6
2002	1.55-{\\&}{\\#}x003BC$\\mathsemicolon$m asymmetric Fabry-Perot modulator ({AFPM}) for high-speed applications	JIAN-JANG HUANG	journal article	9	6
2011	1.55微米電流注入式量子井微碟雷射	高崇閔; Kao, Chung-Min	thesis
2006	10 Gbit/s all-optical non-return to zero-return-to-zero data format conversion based on a backward dark-optical-comb injected semiconductor optical amplifier	GONG-RU LIN	journal article	42	33
2006	10 Gbit/s all-optical NRZ-to-RZ data format conversion in a dark-optical-comb injected semiconductor optical amplifier	GONG-RU LIN	conference paper
2009	10 Gbit/s on-off-keying RZ data generation using a self-feedback pulsating FPLD	GONG-RU LIN	conference paper	0	0
2005	10 Gbit/s tunable dual-wavelength nonreturn-to-zero-to-return-to-zero data-format transformer based on a non-direct-current-biased Fabry-Perot laser diode	GONG-RU LIN	journal article	2	2
2006	10-Gb/s operation of an In<inf>0.53</inf> Ga<inf>0.47</inf> As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate	GONG-RU LIN	journal article	6	3
2013	10-Gbit/s direct modulation of a TO-56-can packed 600-?m long laser diode with 2% frontfacet reflectance	GONG-RU LIN	journal article	17	15
2010	100 GHz Ga2O3/GaN single nanowire metal-oxide-semiconductor transistor	LUNG-HAN PENG	conference paper
2010	100GHz depletion-mode Ga$\\less$inf$\\greater$2$\\less$/inf$\\greater$O$\\less$inf$\\greater$3$\\less$/inf$\\greater$/{GaN} single nanowire {MOSFET} by photo-enhanced chemical oxidation method	JIAN-JANG HUANG	conference paper	3	0
2005	10Gbps operation of a metamorphic InGaP buffered in<inf>0.53</inf>Ga <inf>0.47</inf>As p-i-n photodetector grown on GaAs substrate	GONG-RU LIN	conference paper	0	0
2006	10GHz dark-optical-comb injection-mode-locked semiconductor optical amplifier fiber laser with 400fs and 30nm tunable pulses	GONG-RU LIN	conference paper
2006	110-pJ and 410-fs pulse at 10 GHz generated by single-stage external fiber compression of optically injection-mode-locked semiconductor optical amplifier fiber laser	GONG-RU LIN	journal article	6	6
2013	12 GHz passive harmonic mode-locking in a 1.06 μm semiconductor optical amplifier-based fiber laser with figure-eight cavity configuration	GONG-RU LIN	journal article	24	24
2008	120% Luminance enhancement of OLED by patterned microlens array	HOANG-YAN LIN	conference paper

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