https://scholars.lib.ntu.edu.tw/handle/123456789/120113
Title: | 奈米結構光電元件之研究─子計畫三:三五族半導體量子點之成長與元件應用 Growth of III-V Semiconductor Quantum Dots and Device Application |
Authors: | 毛明華 | Keywords: | 半導體量子點;半導體雷射;變 率方程式;Semiconductor quantum dots;Semiconductor lasers;Rate equations | Issue Date: | 31-Jul-2002 | Publisher: | 臺北市:國立臺灣大學光電工程學研究所 | Abstract: | 本計畫的研究目標在於: In(Ga)As/GaAs 量子點的成長、其發光特 性的分析、及其發光元件的研究。 InGaAs/GaAs 量子點結構,突破了在 GaAs 基板上成長InGaAs/GaAs 量子井的 限制,將發光波長延伸至1.3 mm,因此可 望在光纖通訊上有重要應用。我們將用 MBE 成長InAs/GaAs 量子點,繼而延伸至 發光波長在1.3 mm的InGaAs/GaAs 系統。 此外,也將製作Fabry-Perot 量子點雷射二 極體,並探討其高速調制應用方面的潛力。 The research topics of this project are: growth of In(Ga)As/GaAs quantum dots, analysis of their optical properties, and application as light-emitting devices. InGaAs/GaAs quantum-dot structures have extended the emission wavelength to 1.3 mm, breaking the limit of InGaAs/GaAs quantum wells on the GaAs substrate. Therefore, they will find important applications in fiber communication. We use MBE to growth InAs/GaAs quantum dots, and extend to the InGaAs/GaAs system with emission wavelength at 1.3 mm. Furthermore, Fabry-Perot QD laser diodes are fabricated, and their potentials in high-speed modulation are investigated. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/11216 | Other Identifiers: | 902215E002038 | Rights: | 國立臺灣大學光電工程學研究所 |
Appears in Collections: | 光電工程學研究所 |
File | Description | Size | Format | |
---|---|---|---|---|
902215E002038.pdf | 353.54 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.