https://scholars.lib.ntu.edu.tw/handle/123456789/147637
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor | National Taiwan University Dept Elect Engn | en |
dc.contributor.author | Tu, Hsing-Yuan | en |
dc.contributor.author | Lin, Yo-Sheng | en |
dc.contributor.author | Chen, Ping-Yu | en |
dc.contributor.author | Lu, Shey-Shi | en |
dc.contributor.author | Pan, Hsuan-Yu | en |
dc.creator | Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi; Pan, Hsuan-Yu | en |
dc.date | 2002-10 | - |
dc.date.accessioned | 2006-11-14T18:23:17Z | - |
dc.date.accessioned | 2018-07-06T09:35:31Z | - |
dc.date.available | 2006-11-14T18:23:17Z | - |
dc.date.available | 2018-07-06T09:35:31Z | - |
dc.date.issued | 2002-10 | - |
dc.identifier | 246246/200611150121219 | zh_TW |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/200611150121219 | - |
dc.description.abstract | The kink phenomenon in scattering parameter of InGaP–GaAs heterojunction bipolar transistors (HBTs) was explained quantitatively for the first time. Our results show that the output impedance of InGaP–GaAs HBTs can be represented by a simple series resistance–capacitance ( – ) circuit at low frequencies and a simple parallel – circuit at high frequencies very accurately because of the high output resistance of HBTs. The behavior of of HBTs is in contrast with that of field effect transistors (FETs), where the smaller drain–source output resistance obscures the ambivalent characteristics. | en |
dc.format | application/pdf | zh_TW |
dc.format.extent | 236667 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en-US | zh_TW |
dc.language.iso | zh_TW | - |
dc.publisher | Taipei:National Taiwan University Dept Elect Engn | en |
dc.relation | IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 10, OCTOBER 2002 | en |
dc.relation.ispartof | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.source | http://ieeexplore.ieee.org/ | en |
dc.subject | HBT | en |
dc.subject | InGaP | en |
dc.subject | kink phenomenon | en |
dc.subject | scattering parameter | en |
dc.title | An Analysis of the Anomalous Dip in Scattering Parameter of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs) | en |
dc.type | journal article | en |
dc.relation.pages | - | - |
dc.relation.journalvolume | VOL. 49 | - |
dc.relation.journalissue | NO. 10 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121219/1/8105.pdf | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.languageiso639-1 | zh_TW | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.orcid | 0000-0003-3106-3154 | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
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