https://scholars.lib.ntu.edu.tw/handle/123456789/147676
標題: | The characteristic of HfO2 on strained SiGe | 作者: | Chen, T.C. Lee, L.S. Lai, W.Z. Liu, C.W. |
關鍵字: | Compressively strained SiGe;HfO2;Annealing temperature | 公開日期: | 2005 | 卷: | 8 | 期: | 2005 | 起(迄)頁: | - | 來源出版物: | Materials Science in Semiconductor Processing | 摘要: | The thermal stability of strained Si0.8Ge0.2 and Si devices with HfO2 gate dielectrics prepared by atomic layer chemical vapor deposition is studied. The interfacial layer at the HfO2/Si or HfO2/SiGe interface changed after different annealing temperatures. The thickness of the interfacial layer increases with increasing annealing temperature due to the trace amount of oxygen in the chamber or at the HfO2 dielectric. The capacitance equivalent thickness (CET) increases with increasing post-deposition annealing (PDA) temperature because of the increase of the interfacial layer. The interfacial trap charge densities (Dit) for the SiGe and Si devices with the PDA temperature of 600 1C are found to be 7.51012 and 1.81011 cm 2 eV 1, respectively. The electrical characteristics of the SiGe device are slightly inferior to the Si device due to the elemental Ge at the HfO2/SiGe interface. Obvious crystallization of HfO2 in SiGe devices with higher annealing temperature causes the raising of leakage current. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/2006111501264968 | 其他識別: | 246246/2006111501264968 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。