https://scholars.lib.ntu.edu.tw/handle/123456789/148548
Title: | SiC vs. Si: two-dimensional analysis of quasi-saturation behavior of DMOS devices operating at elevated temperatures | Authors: | Chang, Y.W. Kuo, J.B. |
Issue Date: | Oct-1995 | Start page/Pages: | - | Source: | Solid-State and Integrated Circuit Technology, 1995 4th International Conference on | URI: | http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032074 | Other Identifiers: | N/A | DOI: | 10.1109/ICSICT.1995.500092 |
Appears in Collections: | 電機工程學系 |
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00500092.pdf | 188.96 kB | Adobe PDF | View/Open |
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