https://scholars.lib.ntu.edu.tw/handle/123456789/150925
標題: | Amorphous silicon TFT capacitance model using an effective temperature approach | 作者: | Chen, S.S. KuoJB |
關鍵字: | Amorphous semiconductors; Silicon; Thin film transistors | 公開日期: | 十一月-1993 | 起(迄)頁: | - | 來源出版物: | Electronics Letters | 摘要: | An analytical capacitance model for a-Si:H thin film transistors, that considers deep and tail states simultaneously, is presented. Using an effective temperature approach and a charge-oriented concept, the localised deep and tail states have been considered in the capacitance model. As verified by the published data, this analytical capacitance model provides an accurate prediction of the C-V characteristics of an a-Si:H thin film transistor. © 1993, The Institution of Electrical Engineers. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027699037&doi=10.1049%2fel%3a19931438&partnerID=40&md5=d03c6ab93c6972cede349315e99711af | ISSN: | N/A | 其他識別: | 0013-5194 | DOI: | 10.1049/el:19931438 |
顯示於: | 電機工程學系 |
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