https://scholars.lib.ntu.edu.tw/handle/123456789/151564
標題: | 氮砷化銦塊材材料及分子束磊晶成長銻化鎵研究 Studies on InAsN bulk films and MBE growth of GaSb |
作者: | 林浩雄 | 關鍵字: | 氮砷化銦;射頻電漿輔助氣態源 分子束磊晶法;銻化鎵;固態源分子束磊 晶法;InAsN;RF plasma assisted gas source MBE;GaSb;Solid Source MBE | 公開日期: | 31-七月-2001 | 出版社: | 臺北市:國立臺灣大學電機工程學系暨研究所 | 摘要: | 於本研究中,我們以射頻電漿輔助之 氣態源分子束磊晶機成長氮砷化銦塊材材 料,並藉由雙晶X 光繞射儀、霍爾效應及 傅氏紅外光光譜轉換儀等方式分析其基本 物理特性,並利用Band anticrossing 理論進 行材料成分與能隙關係的分析。我們也研 究了以固態源分子束磊晶機在砷化鎵和銻 化鎵基板上成長銻化鎵塊材。我們使用銻 裂解加熱管產生的銻單原子為五族來源, 研究五三比和長晶溫度等對銻化鎵磊晶層 品質的影響。成長於GaSb 基板的GaSb 磊 晶層經過成長溫度與Sb/Ga 比的最佳化之 後,其低溫10K PL 已經能夠觀察到0.802eV 的Bound Exciton 甚至0.810eV 的Free Exciton,與文獻的結果比較,顯示我們的 磊晶品質已相當優良。 The growth and characterization of InAsN alloys with various nitrogen contents on InP substrates by using plasma-assisted gas source molecular beam epitaxy are reported. DXRD, Hall, and FTIR measurements were used to study the structural, electrical and optical properties of these alloy film. When N composition increases, InAsN film has broader FWHM in DXRD spectrum and higher residual carrier concentration. Possible origin of the high carrier concentration in InAsN sample is currently under investigation. Absorption spectra of these films show that the fundamental absorption energy of InAsN is higher than that of InAs. This is due to Burstein-Moss effect caused by the residual carriers. To educe the ‘real’ band gap energy of our IdnAsN samples, the energy shift due to band-filling effect and the band gap renormalization effect are calculated by using a self-consistent approach based on the band-anticrossing model. After the correction, the ‘real’ band gap energy of InAsN samples decreases as N increases, follows the bowing effect. We have also studied the growth of GaSb on GaAs or GaSb substrates by solid source molecular beam epitaxy. By using Sb monomer produced by the Sb cracker cell as the group V source, we have studied the effect of V/III ratio and growth temperature to the GaSb film quality. After optimizing growth parameters like growth temperature and Sb/Ga ratio, we can observe bound exciton transition at 0.802eV and free exciton transition at 0.810eV in low temperature(10K) PL. This shows the good quality of the grown GaSb film. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/7820 | 其他識別: | 892218E002098 | Rights: | 國立臺灣大學電機工程學系暨研究所 |
顯示於: | 電機工程學系 |
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892218E002098.pdf | 63.93 kB | Adobe PDF | 檢視/開啟 |
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