https://scholars.lib.ntu.edu.tw/handle/123456789/154334
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hwang, J. S. | zh-TW |
dc.contributor.author | Tyan, S. L. | zh-TW |
dc.contributor.author | Chou, W. Y. | zh-TW |
dc.contributor.author | Lee, M. L. | zh-TW |
dc.contributor.author | Weybume, D. | zh-TW |
dc.contributor.author | Hang, Z. | zh-TW |
dc.contributor.author | Lee, T. L. | zh-TW |
dc.contributor.author | Lin, Hao-Hsiung | en |
dc.creator | Hwang, J. S.; Tyan, S. L.; Lee, M. L.; Chou, W. Y.; Weybume, D.; Hang, Z.; Lin, Hao-Hsiung; Lee, T. L. | - |
dc.date | 1994 | en |
dc.date.accessioned | 2009-02-04T13:57:51Z | - |
dc.date.accessioned | 2018-07-06T15:14:15Z | - |
dc.date.available | 2009-02-04T13:57:51Z | - |
dc.date.available | 2018-07-06T15:14:15Z | - |
dc.date.issued | 1994 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028444199&doi=10.1063%2f1.111294&partnerID=40&md5=c5807e3682964f22bfc0e9d36e302418 | - |
dc.description.abstract | We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge. | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | Applied Physics Letters, v.64, p.3314-3316 | en |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.subject.other | Aluminum; Calculations; Composition effects; Curve fitting; Electric fields; Electron energy levels; Energy gap; Molecular beam epitaxy; Oscillations; Franz Keldysh oscillations; Photoreflectance; Schottky barrier; Surface Fermi level; Surface intrinsic structures; Semiconducting indium compounds | - |
dc.title | Photoreflectance Study of Surface Fermi Level in Molecular Beam Epitaxial Grown InAlAs Heterostructures | en |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.111294 | - |
dc.identifier.scopus | 2-s2.0-0028444199 | - |
dc.relation.pages | 3314-3316 | - |
dc.relation.journalvolume | v.64 | - |
item.openairetype | journal article | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.fulltext | no fulltext | - |
item.languageiso639-1 | en_US | - |
item.grantfulltext | none | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0003-3408-6538 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
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