https://scholars.lib.ntu.edu.tw/handle/123456789/155640
標題: | Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells | 作者: | Lin, Ching-Fuh Su, Yi-Shin Wu, Chao-Hsin Chang, Yu-Chia |
關鍵字: | Carrier distribution; Laser diode; Multiple quantum wells; Nonidentical multiple quantum wells; Separate confinement heterosturcture | 公開日期: | 2004 | 卷: | 43 | 期: | 10 | 起(迄)頁: | 7032-7035 | 來源出版物: | Japanese Journal of Applied Physics | 摘要: | The thickness of the separate confinement heterostructure (SCH) layer is found to have a significant influence on the carrier distribution among InGaAsP multiple quantum wells in laser diodes. When the SCH layer is 120nm thick, the carrier distribution of the fabricated laser diodes favors quantum wells near the n-cladding layer. When the thickness of the SCH layer is reduced to 20 nm, the carrier distribution of the fabricated laser diodes favors quantum wells near the p-cladding layer. Our experiments indicate that the carrier distribution of a fabricated laser diode can be engineered using an SCH layer of appropriate thickness. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/145950 http://ntur.lib.ntu.edu.tw/bitstream/246246/145950/1/63.pdf https://www.scopus.com/inward/record.uri?eid=2-s2.0-10844237368&doi=10.1143%2fJJAP.43.7032&partnerID=40&md5=fea5b339f7e9b4998380f570a78e55aa |
ISSN: | 00214922 | DOI: | 10.1143/JJAP.43.7032 | SDG/關鍵字: | Cladding (coating); Electric currents; Heterojunctions; Light absorption; Semiconducting indium compounds; Semiconductor lasers; Carrier distribution; Fabry-Perot laser diodes; Nonidentical multiple quantum wells; Separate confinement heterostructure; Semiconductor quantum wells |
顯示於: | 電機工程學系 |
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