https://scholars.lib.ntu.edu.tw/handle/123456789/155705
標題: | Self-organized InAs/GaAs quantum dots grown on (1 0 0) misoriented substrates by molecular beam epitaxy | 作者: | Chen, Ming-Chin Liao, M. C. Lin, Hao-Hsiung |
關鍵字: | GaAs; InAs; Misoriented substrate; Molecular beam epitaxy; Quantum dots | 公開日期: | 1998 | 期: | 188 | 起(迄)頁: | 383-386 | 來源出版物: | Journal of Crystal Growth | 摘要: | In this study, self-organized InAs quantum dots (QDs) were grown on (1 0 0) GaAs substrates with a 7° off-cut towards the (1 1 0) plane by using molecular beam epitaxy. QD with 2 ML nominal thickness grown on the vicinal substrate shows a 8.5 K photoluminescence line width of 27 meV and a dot density of 3 × 1011/cm2. © 1998 Elsevier Science B.V. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032096796&doi=10.1016%2fS0022-0248%2898%2900059-1&partnerID=40&md5=dcd831d725334eceef4f8c9d0434ac2a | DOI: | 10.1016/S0022-0248(98)00059-1 | SDG/關鍵字: | Crystal orientation; Molecular beam epitaxy; Photoluminescence; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconductor growth; Substrates; Indium arsenide; Semiconductor quantum dots |
顯示於: | 電機工程學系 |
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