https://scholars.lib.ntu.edu.tw/handle/123456789/155723
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, Jyh-Shyang | en |
dc.contributor.author | Lin, Hao-Hsiung | en |
dc.contributor.author | Song, Li-Wei | en |
dc.contributor.author | Chen, Guan-Ru | en |
dc.creator | Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru | - |
dc.date | 2001 | en |
dc.date.accessioned | 2009-03-18T08:46:36Z | - |
dc.date.accessioned | 2018-07-06T16:41:37Z | - |
dc.date.available | 2009-03-18T08:46:36Z | - |
dc.date.available | 2018-07-06T16:41:37Z | - |
dc.date.issued | 2001 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035087934&doi=10.1116%2f1.1330265&partnerID=40&md5=f6e33fca2c5149997c0a06d63227e184 | - |
dc.description.abstract | Gas source molecular beam epitaxy (GSMBE) and rf plasma nitrogen source were used to grow InAsN/InGaAs(P) quantum wells on semiconductor InP substrates. The double X-ray diffraction spectra revealed the presence of a flatter heterointerface formed due to lattice mismatching. The existence of dislocations on arsenic sites was effected by the degradation of photoluminescence intensity due to the increase of the nitrogen composition in InAsN multiple quantum wells. Increasing nitrogen composition in the InAsN layer resulted in lowered peak energy. Effects of growth temperature on photoluminescence intensity were also discussed. | - |
dc.format | application/pdf | en |
dc.format.extent | 90250 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | Journal of Vacuum Science & Technology B 19 (1): 202-206 | en |
dc.relation.ispartof | Journal of Vacuum Science & Technology | - |
dc.subject.other | Composition effects; Crystal defects; Electron transitions; Heterojunctions; Molecular beam epitaxy; Nitrogen; Photoluminescence; Plasma sources; Semiconducting indium gallium arsenide; Semiconductor growth; Substrates; X ray crystallography; Gas source molecular beam epitaxy (GSMBE); Semiconductor quantum wells | - |
dc.title | Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy | en |
dc.type | journal article | en |
dc.identifier.doi | 10.1116/1.1330265 | - |
dc.identifier.scopus | 2-s2.0-0035087934 | - |
dc.relation.pages | 202-206 | - |
dc.relation.journalvolume | Vacuum | - |
dc.relation.journalissue | 1 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/146075/1/28.pdf | - |
item.fulltext | with fulltext | - |
item.languageiso639-1 | en_US | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.grantfulltext | open | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0003-3408-6538 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
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