https://scholars.lib.ntu.edu.tw/handle/123456789/155739
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, P.-W. | en |
dc.contributor.author | Liao, G.-H. | en |
dc.contributor.author | HAO-HSIUNG LIN | en |
dc.creator | Liu, P.-W.; Liao, G.-H.; Lin, H.-H. | en |
dc.date | 2004 | en |
dc.date.accessioned | 2009-03-18T09:18:46Z | - |
dc.date.accessioned | 2018-07-06T16:41:47Z | - |
dc.date.available | 2009-03-18T09:18:46Z | - |
dc.date.available | 2018-07-06T16:41:47Z | - |
dc.date.issued | 2004 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-1242298648&doi=10.1049%2fel%3a20040119&partnerID=40&md5=583f380d8acd0c9dbca0adf2de877cb3 | - |
dc.description.abstract | A highly strained GaAs/GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 μm pulsed operation with a low threshold current density of 300 A/cm2. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature. | - |
dc.format | application/pdf | en |
dc.format.extent | 58216 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | Electronics Letters 40 (3): 177-179 | en |
dc.relation.ispartof | Electronics Letters | en_US |
dc.subject.other | Antimony; Current density; Etching; High temperature effects; Laser beam effects; Molecular beam epitaxy; Optical communication; Optical waveguides; Semiconducting gallium arsenide; Semiconductor growth; Spontaneous emission; Wetting; Bandgap energy; Wet-etching; Quantum well lasers | - |
dc.title | 1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy | en |
dc.type | journal article | en |
dc.identifier.doi | 10.1049/el:20040119 | - |
dc.identifier.scopus | 2-s2.0-1242298648 | - |
dc.relation.pages | 177-179 | - |
dc.relation.journalvolume | 40 | - |
dc.relation.journalissue | 3 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/146179/1/50.pdf | - |
item.languageiso639-1 | en_US | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | open | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0003-3408-6538 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。