https://scholars.lib.ntu.edu.tw/handle/123456789/155941
標題: | ArF-line high transmittance attenuated phase shift mask blanks using amorphous Al2O3-ZrO2-SiO2 composite thin films for the 65-, 45- and 32-nm technology nodes | 作者: | Lai, Fu-Der Hua, Jui-Ming Huang, Chiyuan Ko, Fu-Hsiang LON A. WANG Lin, C. H. Chang, C. M. Lee, Sengchi Chern, Gia Wei |
關鍵字: | Amorphous composite film; ArF-exposure-line lithography; High transmittance attenuated phase shift mask; Optical properties | 公開日期: | 2006 | 卷: | 496 | 期: | 2 | 起(迄)頁: | 247-252 | 來源出版物: | Thin Solid Films | 摘要: | Amorphous (ZrO2)x-(SiO2)1-x and (Al2O3)x-(ZrO2)y- (SiO2)1-x-y composite films were prepared using r.f. unbalanced magnetron sputtering in an atmosphere of argon and oxygen at room temperature. The (ZrO2)x-(SiO2)1-x and (Al2O3)x-(ZrO2) y-(SiO2)1-x-y composite films were completely oxidized when an O2/Ar flow rate ratio of 2.0 was used. The optical constants of these thin films depend linearly on the mole fraction of corresponding films. By tuning the (x, y) mole fractions of (Al 2O3, ZrO2) in the (Al2O 3)x-(ZrO2)y-(SiO2) 1-x-y composite films, the optical constants can meet the optical requirements for a high transmittance attenuated phase shift mask (HT-AttPSM) blank. The n-k values in the quadrangular area in the (x, y) plane, where x and y represent the mole fractions of Al2O3 and ZrO 2, respectively, meet the optical requirements for an HT-AttPSM blank with an optimized transmittance of 20 ± 5% in ArF lithography. It is noted that the quadrangular area is bounded by (0, 0.31), (0, 0.62), (0.26, 0) and (0.57, 0). All the films also met the chemical and adhesion requirements for an HT-AttPSM application. One (Al2O3)0.1- (ZrO2)0.52-(SiO2)0.38 composite film was fabricated with optical properties that meet the optimized optical requirements of ArF-line HT-AttPSM blanks. Combined with these HT-AttPSMs, ArF-line (immersion) lithography may have the potential of reaching 65-, 45-nm and possibly the 32-nm technology nodes for the next three generations. © 2005 Elsevier B.V. All rights reserved. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/148225 https://www.scopus.com/inward/record.uri?eid=2-s2.0-28044466233&doi=10.1016%2fj.tsf.2005.08.382&partnerID=40&md5=d1ea18623e474bb39f585ae5d6a9ae1c |
ISSN: | 00406090 | DOI: | 10.1016/j.tsf.2005.08.382 | SDG/關鍵字: | Amorphous materials; Attenuation; Composite materials; Fluorine compounds; Lithography; Magnetron sputtering; Masks; Opacity; Optical properties; Phase shift; Thin films; Amorphous composite films; ArF-exposure line lithography; High transmittance attenuated phase shift masks; Optical constants; Zirconium alloys |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。