https://scholars.lib.ntu.edu.tw/handle/123456789/173504
Title: | 奈米結構光電元件之研究-子計畫一:含銻化合物半導體光電元件技術之研究 | Authors: | 林浩雄 | Keywords: | 分子束磊晶;銻砷化鎵量子井;molecular beam epitaxy;GaAsSb quantum well | Issue Date: | 31-Jul-2002 | Publisher: | 臺北市:國立臺灣大學電子工程學研究所 | Abstract: | 本研究以固態源分子束磊晶機在 砷化鎵基板上成長銻砷化鎵/砷化鎵量 子井。在銻砷化鎵/砷化鎵量子井方面, 所成長的銻砷化鎵/砷化鎵多層量子井 雷射結構在室溫光激螢光譜波長為 1.27μm,半寬為66.6meV。並且成功製 作出在室溫下起振的銻砷化鎵/砷化鎵 量子井雷射,放光波長在1.28μm,其起 振電流密度為210A/cm2。 We have studied the growth of the GaAsSb/GaAs MQWs on GaAs by solid-source molecular beam epitaxy The emitting wavelength of GaAsSb/GaAs MQWs is 1.27μm with FWHM of 66.6 meV at room temperature. And room temperature 1.28μm lasers have been fabricated, and the threshold current density is as low as 210A/cm2. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/19975 | Other Identifiers: | 902215E002036 | Rights: | 國立臺灣大學電子工程學研究所 |
Appears in Collections: | 電子工程學研究所 |
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902215E002036.pdf | 50.52 kB | Adobe PDF | View/Open |
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