https://scholars.lib.ntu.edu.tw/handle/123456789/294325
標題: | A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques | 作者: | S. C. Liu Frank Wu JAMES-B KUO |
關鍵字: | CMOS; Content-addressable memory (CAM); Dynamic threshold (DTMOS); Low voltage; Partially depleted (PD) silicon-on-insulator (SOI); Tag cell; VLSI | 公開日期: | 四月-2001 | 卷: | 36 | 期: | 4 | 起(迄)頁: | 712-716 | 來源出版物: | IEEE Journal of Solid-State Circuits | 摘要: | This paper reports a novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques. With two auxiliary pass transistors to dynamically control the bodies of transistors in the tag-compare portion of CAM cell, this SOI CAM cell has a fast tag-compare capability at a low supply voltage of 0.7 V as verified by the results from the two-dimensional semiconductor device simulation program MEDICI. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035307445&doi=10.1109%2f4.913752&partnerID=40&md5=01dc381852607d860e630d4215369434 | DOI: | 10.1109/4.913752 |
顯示於: | 電機工程學系 |
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