https://scholars.lib.ntu.edu.tw/handle/123456789/310414
標題: | Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy | 作者: | C. M. Lai F. Y. Chang G. J. Jan HAO-HSIUNG LIN |
關鍵字: | Composition modulation; Gas-source MBE; InGaP/GaAs; Photoreflectance; Polarization | 公開日期: | 二月-2004 | 卷: | 43 | 期: | 2 | 起(迄)頁: | 735-738 | 來源出版物: | Japanese Journal of Applied Physics | 摘要: | The photoreflectance spectra of an undoped InGaP film grown on a GaAs (001) substrate by gas-source molecular beam epitaxy have been measured at the temperature of 70 K. The band-gap optical transitions attributed to the InGaP epilayer and GaAs substrate have been characterized. Two broad features, which originate from the interface of the InGaP and GaAs layer, also appeared with the transition energies of 1.523 eV and 1.877 eV in the photoreflectance spectra. In addition, the amplitudes of these two optical features show different trends with increasing power of an extra DC pumping laser. The results suggest that the two unusual optical features are attributed to the spatial indirect transitions at the interface. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-2142810238&doi=10.1143%2fJJAP.43.735&partnerID=40&md5=b2e41afc389432bcf8fa76901ff3831b | DOI: | 10.1143/jjap.43.735 | SDG/關鍵字: | Electric field effects; Energy gap; Interfaces (materials); Light polarization; Light reflection; Molecular beam epitaxy; Monochromators; Phase transitions; Photoluminescence; Pumping (laser); Semiconducting indium compounds; Semiconductor growth; Spectroscopic analysis; Conduction band; Gas source molecular beam epitaxy (GSMBE); Lattice match; Photoreflectance (PR) spectra; Heterojunctions |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。