https://scholars.lib.ntu.edu.tw/handle/123456789/310417
標題: | Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy | 作者: | T. S. Lay W. T. Kuo L. P. Chen Y. H. Lai H. Hung J. S. Wang J. Y. Chi D. K. Shih HAO-HSIUNG LIN |
公開日期: | 六月-2004 | 卷: | 22 | 期: | 3 | 起(迄)頁: | 1491-1494 | 來源出版物: | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-3242688049&doi=10.1116%2f1.1735802&partnerID=40&md5=97cdb182694b1fad77b71a110629d6ba | DOI: | 10.1116/1.1735802 | SDG/關鍵字: | Binding energy; Chemical bonds; Heterojunctions; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Semiconducting gallium arsenide; Semiconducting indium gallium arsenide; Sputtering; Synchrotron radiation; Synchrotrons; X ray photoelectron spectroscopy; Bonding configurations; Electronegativity; Short range orders (SRO); Vertical cavity surface emitting lasers (VCSEL); Nitrides |
顯示於: | 電機工程學系 |
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