https://scholars.lib.ntu.edu.tw/handle/123456789/324107
Title: | An analysis of base bias current and intrinsic base resistance effects on InP-InGaAs, InGaP-GaAs, and SiGe heterojunction bipolar transistors | Authors: | Lin, Y.-S. Chen, C.-C. SHEY-SHI LU |
Issue Date: | 2006 | Journal Volume: | 45 | Journal Issue: | 5 A | Start page/Pages: | 3949-3954 | Source: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-33646883274&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/324107 |
DOI: | 10.1143/JJAP.45.3949 |
Appears in Collections: | 電機工程學系 |
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