https://scholars.lib.ntu.edu.tw/handle/123456789/325389
Title: | Analysis of Fringing Electric Field Related Capacitance Behavior of Narrow-Channel FD SOI NMOS Devices Using 3D Simulation | Authors: | C. C. Chen J. B. Kuo K. W. Su S. Liu JAMES-B KUO |
Issue Date: | Oct-2006 | Start page/Pages: | 1376-1379 | Source: | ICSICT | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/325389 | DOI: | 10.1109/icsict.2006.306188 |
Appears in Collections: | 電機工程學系 |
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