https://scholars.lib.ntu.edu.tw/handle/123456789/334025
標題: | A Single-Chip Bluetooth EDR Device in 0.13μm CMOS | 作者: | B. Marholev TSUNG-HSIEN LIN Rofougaran A. Rofougaran M. Syed M. Lee R. Wong Y.C. Lin J. Mak S. Lettieri P. Kim H. Jensen H. Ibrahim B. Chien C.M. Castaneda J. Zolfaghari A. Anand S. Khorram S. Kappes M. Bhatti I. Wu S. Roufoogaran R. Zhang L. Chien E. Pan M. Marholev B. |
公開日期: | 二月-2007 | 起(迄)頁: | 558-560 | 來源出版物: | Digest of Technical Papers - IEEE International Solid-State Circuits Conference | 摘要: | A low-power single-chip Bluetooth EDR device is realized using a configurable transformer-based RF front-end, a low-IF receiver and a direct-conversion transmitter architecture. It is implemented in a 0.13μm CMOS process and occupies 11.8mm2. Sensitivity for 1, 2 and 3Mb/s rates is -88, -90, and -84dBm and transmitter differential EVM is 5.5% rms. © 2007 IEEE. |
URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/334025 https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548816741&doi=10.1109%2fISSCC.2007.373542&partnerID=40&md5=d3e086a920832603122cf9106444ce63 |
ISSN: | 01936530 | DOI: | 10.1109/isscc.2007.373542 | SDG/關鍵字: | CMOS integrated circuits; Electric transformers; Energy conversion; Microprocessor chips; Sensitivity analysis; Conversion transmitter architecture; Single chip Bluetooth; Bluetooth |
顯示於: | 電子工程學研究所 |
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