https://scholars.lib.ntu.edu.tw/handle/123456789/342559
Title: | Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device | Authors: | I. S. Lin V. C. Su J. B. Kuo R. Lee G. S. Lin D. Chen C. S. Yeh C. T. Tsai M. Ma JAMES-B KUO |
Issue Date: | Jun-2008 | Journal Volume: | 55 | Journal Issue: | 6 | Start page/Pages: | 1558-1562 | Source: | IEEE Transactions Electron Devices | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/342559 | DOI: | 10.1109/ted.2008.922858 |
Appears in Collections: | 電機工程學系 |
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