https://scholars.lib.ntu.edu.tw/handle/123456789/349421
Title: | Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Authors: | Chiu, HC Lin, TD Chang, P Lee, WC Chiang, CH Kwo, J Lin, YS Hsu, Shawn SH Tsai, W MINGHWEI HONG |
Issue Date: | 2009 | Start page/Pages: | 141-142 | Source: | International Symposium on VLSI Technology, Systems, and Applications, 2009 | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/349421 |
Appears in Collections: | 應用物理研究所 |
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