https://scholars.lib.ntu.edu.tw/handle/123456789/351960
Title: | Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device | Authors: | H. J. Hung J. B. Kuo C. T. Tsai D. Chen JAMES-B KUO |
Issue Date: | Dec-2009 | Source: | International Semiconductor Devices Research Symposium | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/351960 |
Appears in Collections: | 電機工程學系 |
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