https://scholars.lib.ntu.edu.tw/handle/123456789/362322
標題: | Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene) | 作者: | Lin, C.W. Wang, D.Y. Tai, Y. Jiang, Y.T. Chen, M.C. Chen, C.C. Yang, Y.J. YANG-FANG CHEN |
公開日期: | 2011 | 卷: | 44 | 期: | 29 | 來源出版物: | Journal of Physics D: Applied Physics | 摘要: | Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment. © 2011 IOP Publishing Ltd. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-79960284454&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/362322 |
DOI: | 10.1088/0022-3727/44/29/292002 | SDG/關鍵字: | Band alignments; Bistables; Electrical bistable; matrix; Non-volatile memories; Nonvolatile memory devices; Organic/Inorganic hybrids; P-type; Poly-3-hexylthiophene; Space-charge-limited current; Spin-coating process; Alignment; Coatings; Heterojunctions; Nanocrystals; Optical bistability; Carrier mobility |
顯示於: | 物理學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。