https://scholars.lib.ntu.edu.tw/handle/123456789/369278
標題: | Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting | 作者: | Wang, Y.-T. CHI-TE LIANG YUAN-HUEI CHANG et al. |
公開日期: | 2012 | 卷: | 24 | 期: | 40 | 來源出版物: | Journal of Physics Condensed Matter | 摘要: | We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the former collapsing to the latter with decreasing gate voltage and/or decreasing spin-splitting. The experimental results support a recent theory, based on modular symmetry, which predicts how the critical Hall conductivity varies with spin-splitting. © 2012 IOP Publishing Ltd. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84866511599&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/369278 |
ISSN: | 09538984 | DOI: | 10.1088/0953-8984/24/40/405801 | SDG/關鍵字: | GaAs; Gate voltages; Hall conductivity; InAs; Self-assembled; Spin splittings; Temperature flow; Theoretical prediction; Two-dimensional electron gas (2DEG); Indium arsenide; Two dimensional; Electron gas; gallium; gallium arsenide; organoarsenic derivative; article; chemical model; chemistry; computer simulation; electron transport; flow kinetics; gas; methodology; temperature; Arsenicals; Computer Simulation; Electron Transport; Gallium; Gases; Models, Chemical; Rheology; Temperature |
顯示於: | 物理學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。