https://scholars.lib.ntu.edu.tw/handle/123456789/371823
Title: | Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Authors: | Chu, LK Chiang, TH Lin, TD Lee, YJ Chu, RL Kwo, J Hong, M MINGHWEI HONG |
Issue Date: | 2012 | Journal Volume: | 91 | Start page/Pages: | 89-92 | Source: | Microelectronic Engineering | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/371823 |
Appears in Collections: | 應用物理研究所 |
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