https://scholars.lib.ntu.edu.tw/handle/123456789/372798
Title: | High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation | Authors: | Huang, C.-T. Li, J.-Y. Sturm, J.C. JIUN-YUN LI |
Issue Date: | 2012 | Start page/Pages: | 170-171 | Source: | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84864265333&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/372798 |
DOI: | 10.1109/ISTDM.2012.6222514 |
Appears in Collections: | 電機工程學系 |
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