https://scholars.lib.ntu.edu.tw/handle/123456789/379370
Title: | High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 | Authors: | Lin, TD Chang, WH Chu, RL Chang, YC Chang, YH Lee, MY Hong, PF Chen, Min-Cheng Kwo, J MINGHWEI HONG |
Issue Date: | 2013 | Journal Volume: | 103 | Journal Issue: | 25 | Start page/Pages: | 253509 | Source: | Applied Physics Letters | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/379370 |
Appears in Collections: | 應用物理研究所 |
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