https://scholars.lib.ntu.edu.tw/handle/123456789/384551
標題: | Electrically and optically readable light emitting memories | 作者: | YANG-FANG CHEN Chang C.-W Tan W.-C Lu M.-L Pan T.-C YING-JAY YANG |
公開日期: | 2014 | 卷: | 4 | 來源出版物: | Scientific Reports | 摘要: | Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO 2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84902105439&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/384551 |
ISSN: | 20452322 | DOI: | 10.1038/srep05121 |
顯示於: | 物理學系 |
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