https://scholars.lib.ntu.edu.tw/handle/123456789/425283
標題: | The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil | 作者: | Chiu I.-C. Huang J.-J. Chen Y.-P. Cheng I.-C. Chen J.Z. JIAN-ZHANG CHEN I-CHUN CHENG |
公開日期: | 2010 | 卷: | 33 | 期: | 5 | 起(迄)頁: | 65-69 | 來源出版物: | ECS Transactions | 摘要: | Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs) fabricated on flexible transparent polyimide substrates were investigated. The saturation electron field-effect mobility and electrical bias-stress stability of these TFTs were evaluated under applied tensile mechanical strain parallel to the source-drain direction. The mobilities increased accompanying with deteriorated electrical stabilities as the applied tensile strain increased. The power-law dependence between the threshold voltage shift and the gate-bias stressing time indicated that the instability was mainly caused by the state creation at the interface between nc-Si:H channel and gate dielectric. ?The Electrochemical Society. |
描述: | 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting,11 October 2010 through 15 October 2010,Las Vegas, NV |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/425283 | ISBN: | 9781566778244 | ISSN: | 19385862 | DOI: | 10.1149/1.3481220 |
顯示於: | 應用力學研究所 |
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