The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil
Journal
ECS Transactions
Journal Volume
33
Journal Issue
5
Pages
65-69
ISBN
9781566778244
Date Issued
2010
Author(s)
Abstract
Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs) fabricated on flexible transparent polyimide substrates were investigated. The saturation electron field-effect mobility and electrical bias-stress stability of these TFTs were evaluated under applied tensile mechanical strain parallel to the source-drain direction. The mobilities increased accompanying with deteriorated electrical stabilities as the applied tensile strain increased. The power-law dependence between the threshold voltage shift and the gate-bias stressing time indicated that the instability was mainly caused by the state creation at the interface between nc-Si:H channel and gate dielectric. ?The Electrochemical Society.
Description
10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting,11 October 2010 through 15 October 2010,Las Vegas, NV
Type
conference paper