|Title:||The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil||Authors:||Chiu I.-C.
|Issue Date:||2010||Journal Volume:||33||Journal Issue:||5||Start page/Pages:||65-69||Source:||ECS Transactions||Abstract:||
Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs) fabricated on flexible transparent polyimide substrates were investigated. The saturation electron field-effect mobility and electrical bias-stress stability of these TFTs were evaluated under applied tensile mechanical strain parallel to the source-drain direction. The mobilities increased accompanying with deteriorated electrical stabilities as the applied tensile strain increased. The power-law dependence between the threshold voltage shift and the gate-bias stressing time indicated that the instability was mainly caused by the state creation at the interface between nc-Si:H channel and gate dielectric. ?The Electrochemical Society.
10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting,11 October 2010 through 15 October 2010,Las Vegas, NV
|Appears in Collections:||應用力學研究所|
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