https://scholars.lib.ntu.edu.tw/handle/123456789/443369
Title: | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al<inf>2</inf>O<inf>3</inf> on freshly molecular beam epitaxy grown GaAs | Authors: | Chang, Y.H. Huang, M.L. Chang, P. Lin, C.A. Chu, Y.J. Chen, B.R. Hsu, C.L. Kwo, J. Pi, T.W. Hong, M. MINGHWEI HONG |
Issue Date: | 2011 | Journal Volume: | 88 | Journal Issue: | 4 | Start page/Pages: | 440-443 | Source: | Microelectronic Engineering | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443369 | DOI: | 10.1016/j.mee.2010.09.015 |
Appears in Collections: | 物理學系 |
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