https://scholars.lib.ntu.edu.tw/handle/123456789/447616
標題: | Effect of mechanical stress on characteristics of silicon thermal oxides | 作者: | Huang, C. H. JENN-GWO HWU JIA-YUSH YEN |
關鍵字: | Interface state density; Mechanical stress; Oxides | 公開日期: | 2002 | 卷: | 41 | 期: | 1 | 起(迄)頁: | 81-82 | 來源出版物: | Japanese Journal of Applied Physics | 摘要: | The characteristics of silicon thermal oxides grown on silicon wafers under mechanical stress were discussed. It was found that the etch rate of SiO2 films grown under compressive stress was decreased. The capacitance-voltage (C-V) measurements showed that the interface state density of tensile sample was decreased and that of compressive sample was increased. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036317703&doi=10.1143%2fJJAP.41.81&partnerID=40&md5=5449612cd42f5415749463dbfbc09664 | ISSN: | 0021-4922 | DOI: | 10.1143/JJAP.41.81 | SDG/關鍵字: | Capacitance; Compressive stress; Electric potential; Etching; Interfaces (materials); Semiconducting films; Semiconductor growth; Silicon wafers; Tensile properties; Mechanical stress; Semiconducting silicon compounds |
顯示於: | 機械工程學系 |
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